ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,847, issued on Nov. 3, was assigned to Intel Corp. (Santa Clara, Calif.). "Integrating and accessing passive components in wafer-level packa... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,848, issued on Nov. 3, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Semiconductor module and semiconductor device" was invente... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,849, issued on Nov. 3. "Power semiconductor package" was invented by Geza Dezsi (Durham, N.C.) and Yusheng Lin (Phoenix). According to the ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,850, issued on Nov. 3, was assigned to HITACHI ENERGY LTD (Zurich, Switzerland). "Semiconductor power module and method for manufacturing a ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,851, issued on Nov. 3, was assigned to Intel Corp. (Santa Clara, Calif.). "Laser assisted etching of dielectrics in IC devices" was invented... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,852, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor package and method for manufactu... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,853, issued on Nov. 3, was assigned to Micron Technology Inc. (Boise, Idaho). "Molded memory assemblies for a system in package semiconducto... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,854, issued on Nov. 3, was assigned to TONG HSING ELECTRONIC INDUSTRIES LTD. (Taoyuan City, Taiwan). "Power chip package structure" was inve... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,856, issued on Nov. 3, was assigned to Advanced Micro Devices Inc. (Santa Clara, Calif.) and ATI Technologies ULC (Markham, Canada). "Lid as... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,857, issued on Nov. 3, was assigned to Infineon Technologies AG (Neubiberg, Germany). "Semiconductor module with shaped external contact for... Read More